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Understanding the STM images of epitaxial graphene on a reconstructed 6H-SiC(0001) surface: the role of tip-induced mechanical distortion of graphene

机译：了解重建的6H-SiC（0001）表面上外延石墨烯的STM图像：尖端引起的石墨烯机械变形的作用

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Epitaxial graphene (EG) grown on an annealed 6H-SiC(0001) surface has been studied under ultra-high vacuum (UHV) conditions by using a combined dynamic-scanning tunneling microscope/frequency modulation-atomic force microscope (dynamic-STM/FM-AFM) platform based on a qPlus probe. STM and AFM images independently recorded present the same hexagonal lattice of bumps with a 1.9 nm lattice period, which agrees with density functional theory (DFT) calculations and experimental results previously reported, attributed to the (6 × 6) quasi-cell associated with the 6H-SiC(0001) (6 3 × 6 3) R30°reconstruction. However, topographic bumps in AFM images and maxima in the simultaneously recorded mean-tunneling-current map do not overlap but appear to be spaced typically by about 1 nm along the [11] direction of the (6 × 6) quasi-cell. A similar shift is observed between the position of maxima in dynamic-STM images and those in the simultaneously recorded frequency shift map. The origin of these shifts is discussed in terms of electronic coupling variations between the local density of states (LDOS) of EG and the LDOS of the buffer layer amplified by mechanical distortions of EG induced by the STM or AFM tip. Therefore, a constant current STM image of EG on a reconstructed 6H-SiC(0001) surface does not reproduce its real topography but corresponds to the measured LDOS modulations, which depend on the variable tip-induced graphene distortion within the (6 × 6) quasi-cell.
机译：通过使用动态扫描隧道显微镜/调频原子力显微镜（dynamic-STM / FM）在超高真空（UHV）条件下研究了在退火的6H-SiC（0001）表面上生长的外延石墨烯（EG） -AFM）平台基于qPlus探针。分别记录的STM和AFM图像呈现出具有1.9 nm晶格周期的凸块的相同六角形晶格，这与先前报道的密度泛函理论（DFT）计算和实验结果相符，这归因于（6×6）准电池与6H-SiC（0001）（6 3×6 3）R30°重构但是，AFM图像中的地形凸点和同时记录的平均隧道电流图中的最大值并不重叠，而是沿着（6×6）准单元的[11]方向通常间隔约1 nm。在动态STM图像中的最大值位置与同时记录的频移图中的最大值位置之间观察到相似的偏移。这些位移的起源是根据EG的局部状态密度（LDOS）与STM或AFM尖端引起的EG的机械变形放大的缓冲层的LDOS之间的电子耦合变化来讨论的。因此，在重建的6H-SiC（0001）表面上的EG恒定电流STM图像不会重现其真实形貌，但对应于所测得的LDOS调制，这取决于（6×6）范围内尖端引起的石墨烯畸变准单元。

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